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Micropto_TOP
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Optoelectronics
chips sensors
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Here you can find all the
silicon photodiodes and phototransistor mounted in our optodevices (opto-sensors). Many
others are available in the link at the bottom of this page and others are available under
our developing. The main devices have special characteristics:
- high speed
- high responsivity
- Antireflecting coatings (ARC) ¼
wave filter
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MO - DFD01 Silicon P/N photodiode
Antireflective coating
Chip size: 2,3 mm x 1,1 mm
Photodiode active area: 1,89 mm2 (2,1 mm x 0,9 mm)
Chip thickness: 0,385 mm
More
information |
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MO - DFT02 Silicon NPN phototransistor
Antireflective coating
Chip size: 0,71 mm x 0,50 mm
Phototransistor active area: 0,08 mm2 (0,20 mm x 0,40 mm)
Chip thickness: 0,180 mm
High gain uniformity: ± 15%
More
information |
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MO - DFT01 (NEW - developing!) High performance Silicon NPN phototransistor (high speed with wide
active area)
Antireflective coating
Chip size: 0,95 mm x 0,60 mm
Phototransistor active area: 0,180 mm2 (0,45 mm x 0,40 mm)
Chip thickness: 0,240 mm
High gain uniformity: ± 15%
More
information |
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MO - DMTxxL High performance
monolithic silicon NPN phototransistor
Optical pitch: 0,60 mm
Antireflective coating
Array: bit number on customers request
Phototransistor active area: 0,180 mm2 (0,45 mm x 0,40 mm)
Chip thickness: 0,240 mm
High gain uniformity: ±15%
More
information |
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MO - DMTxxS High performance
monolithic silicon NPN phototransistor
Optical pitch: 0,68 mm
Antireflective coating
Array: bit number on customers request
Phototransistor active area: 0,180 mm2 (0,45 mm x 0,40 mm)
Chip thickness: 0,240 mm
High gain uniformity: ±15%
More
information |
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MO - DCD03 Monolithic color sensor
RGB sensor
3 Photodiodes.
More
information |
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Special structures and
customised disposes are feasible under customer specifications. General photosensors list
(photodiodes and phototransistors) to mount on request in our packages (both standard or
custom)
Back
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Micropto S.r.l.
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20133 Milano (Italy)
URL: https://www.micropto.com
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