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Optoelectronics chips sensors

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Here you can find all the silicon photodiodes and phototransistor mounted in our optodevices (opto-sensors). Many others are available in the link at the bottom of this page and others are available under our developing. The main devices have special characteristics:
  • high speed
  • high responsivity
  • Antireflecting coatings (ARC)  ¼ wave filter

 
Fotodiodo DFD01 MO - DFD01

Silicon P/N photodiode
Antireflective coating
Chip size: 2,3 mm x 1,1 mm
Photodiode active area: 1,89 mm2 (2,1 mm x 0,9 mm)
Chip thickness: 0,385 mm

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Fototransistor DFT02 MO - DFT02

Silicon NPN phototransistor
Antireflective coating
Chip size: 0,71 mm x 0,50 mm
Phototransistor active area: 0,08 mm2 (0,20 mm x 0,40 mm)
Chip thickness: 0,180 mm
High gain uniformity: ± 15%

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NUOVO fototransistor DFT01

 MO - DFT01 (NEW - developing!)

High performance Silicon NPN phototransistor (high speed with wide active area)
Antireflective coating
Chip size: 0,95 mm x 0,60 mm
Phototransistor active area: 0,180 mm2 (0,45 mm x 0,40 mm)
Chip thickness: 0,240 mm
High gain uniformity: ± 15%

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Composizione di XX fototransistors, anche monolitica DMTxx.

 MO - DMTxxL

High performance monolithic silicon NPN phototransistor
Optical pitch: 0,60 mm
Antireflective coating
Array: bit number on customer’s request
Phototransistor active area: 0,180 mm2 (0,45 mm x 0,40 mm)
Chip thickness: 0,240 mm
High gain uniformity: ±15%

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MO - DMTxxS

High performance monolithic silicon NPN phototransistor
Optical pitch: 0,68 mm
Antireflective coating
Array: bit number on customer’s request
Phototransistor active area: 0,180 mm2 (0,45 mm x 0,40 mm)
Chip thickness: 0,240 mm
High gain uniformity: ±15%

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MO - DCD03

Monolithic color sensor
RGB sensor
3 Photodiodes.

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Special structures and customised disposes are feasible under customer specifications.

General photosensors list (photodiodes and phototransistors) to mount on request in our packages (both standard or custom)

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