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Micropto_TOP

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VCSEL


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  • High performance Emitter: VCSEL Dice (DVE03).
  • VCSEL Infrared 850 nm Emitter
  • Low Current
  • Very High Speed

 

ELECTRO-OPTICAL CHARACTERISTICS (T=25C unless otherwise specified)

PARAMETER

SYMBOL

UNITS

MIN.

TYP.

MAX

NOTE

Peak Wavelength

Lambda p

nm

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850

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Threshold Current

Ith

mA

8

9

12

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Output Power at High Current

P1

mW

1,8

5

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Slope Efficiency

D P1/D I

mW/mA

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0,5

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Operating Voltage at Low Current

V0

V

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2,8

Low Current Defined As I0=9mA
Differential Resistance

d R

ohm

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40

65

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Reverse Bias Voltage

Vrev

V

5

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Total Beam Divergence

tetha

deg

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20

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ABSOLUTE MAXIMUM RATINGS (T=25C unless otherwise stated)

PARAMETER

RATING

Storage Temperature

-40 to +100C

Operating Temperature

0 to 70C

Maximum Die Exposure

325C for 10 sec

Maximum Optical Output Power

10 mW

Maximum Revers Bias Voltage

5 V

Maximum continuous Operating Current

20 mA

Maximum Instantaneous Operating Current

25 mA

IMPORTANT NOTICE

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress only, and functional operation of the device at these or any other conditions beyond those indicated for extended periods of time may effect device reliability.

WARNING: Semiconductor LASER Class 3B device. Avoid exposure, invisible LASER radiation is emitted

Micropto S.r.l. reserves the right to make changes in order to improve design and supply the best product possible.

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Micropto S.r.l. 
Via M. Melloni, 6 
20129 Milano (Italy) 

Tel.: +39.02.76316761 
Tel.: +39.02.76011848 
Fax: +39.02.76408519 
Fax: +39.02.37645650 

URL: http://www.micropto.com


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